Triode/MOS tube/transistor/module

N MOS tube

Low saturation voltage bipolar junction transistors (BJTs) are tiny surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

N channel

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 400V, 3.1A, 1.8Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 130A Power (Pd): 140W On-Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,10A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 66nC@10V Input capacitance (Ciss@Vds): 5.377nF@25V, Vds=60V Id=130A Rds=2.8mΩ, working Temperature: -55℃~+150℃@(Tj)