Triode/MOS tube/transistor/module

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher performance. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

Ruijun power MOS tube, 75V80A, Rds(ON) = 8mΩ

PNP, Vo=-50V, Ic=-100mA

Voltage VDSS650V, conduction resistance Rds5 ohms, charge Qg14nC, current ID2A

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 20 VGS(th)(v) 2 RDS(ON)(m?)@4.407V - Qg(nC)@4.5V - QgS(nC) 42 Qgd(nC) 35 Ciss(pF) 3100 Coss(pF) 210 Crss(pF) 150

N-channel, 60V, 3A, 105mΩ@10V