Triode/MOS tube/transistor/module

N-channel, 900V, 9A, 1.4Ω@10V

PNP, Vceo=-40V, Ic=-200mA

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 8.8 VGS(th)(v) - RDS(ON)(m?)@4.64V 9 Qg(nC)@4.5V 16 QgS(nC) 3 Qgd(nC) 4.5 Ciss(pF) 2400 Coss(pF) 170 Crss(pF) 135

20V 0.5A

NPN, Vceo=180V, IC=2A, PD=20W

P channel -60V -4.5A

PNP

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher performance. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.