Triode/MOS tube/transistor/module

N channel

N-channel, 600V, 7.5A

Dual N-channel, 30V, 100mA

NPN 400V 4A

N-channel, 60V, 2.3A

CSD25213W10 P-Channel NexFET™ Power MOSFET, CSD25213W10

Triode Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 200mA Power (Pd): 300mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation voltage (VCE (sat)@Ic,Ib): 650mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 300@2mA, 5V Characteristic frequency (fT): 200MHZ Operating temperature: -55℃~+150℃@(Tj )