Triode/MOS tube/transistor/module

Type P Drain-Source Voltage (Vdss) -40 Threshold Voltage (Vgs) 25 Continuous Drain Current (Id) - 16.5 On-Resistance (mΩ) 11 Input Capacitance (Ciss) 2780 Reverse Transfer Capacitance Crss(pF) 330 Gate Charge (Qg) 59

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 80V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 250mV@100mA, 10mA DC current gain (hFE@Ic,Vce): 100@10mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Withstand voltage 20V, used in medium voltage switching power supply, input high impedance electronic circuit

NPN 60W 100V 7A Applications: For audio output applications

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

The FDS6986AS is used to replace two single SO-8 MOSFETs and Schottky diodes in synchronous DC:DC power supplies to provide various peripheral voltages for notebook computers and other battery-operated electronic equipment. The FDS6986AS contains two distinct 30V, N-channel, logic level, PowerTrench MOSFETs for maximum power conversion efficiency. The high-side switch (Q1) is designed with special emphasis on reducing switching losses, while the low-side switch (Q2) is also optimized for low conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor's monolithic SyncFET technology.