Triode/MOS tube/transistor/module

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Added G-S Zener to increase ESD voltage level.

MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Integrated P-MOS and Schottky diode,

N-channel, 30V, 5.8A, 30mΩ@10V

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Added G-S Zener to increase ESD voltage level.

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 60V, current: 50A, 10V internal resistance (Max): 0.017Ω, 4.5V internal resistance (Max): 0.022Ω, power: 80W

N-Channel, UltraFET Trench MOSFET, 100V, 44A, 28mΩ