Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 650 VGS(V) 30 ID(A)Max. 10 VGS(th)(v) 3 RDS(ON)(m?)@4.510V - Qg(nC)@4.5V - QgS(nC) 7.5 Qgd(nC) 6 Ciss(pF) 1120 Coss(pF) 130 Crss(pF) 4.9

Field Effect Transistor (MOSFET) Type: N-channel Drain-Source Voltage (Vdss): 500V Continuous Drain Current (Id): 5A Power (Pd): 24.5W On-resistance (RDS(on)@Vgs,Id: 1.4Ω @10V, 2.5A Threshold Voltage (Vgs(th)@Id): 3.2@250uA Gate Charge (Qg@Vgs) 13nC@10V Input Capacitance (Ciss@Vds): 0.415nF@25V , Vds=500v Id=5A Rds =1.4Ω, working temperature: -55℃~+150℃@(Tj)

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 60 VGS(th)(v) - RDS(ON)(m?)@4.222V 9.5 Qg(nC)@4.5V - QgS(nC) 6.5 Qgd(nC) 12.4 Ciss(pF) 2604 Coss(pF) 362 Crss(pF) 6.5

Power MOSFET, Dual N-Channel, 20V, 70mΩ, TSOP6 encapsulation

This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 305V Collector current (Ic): 200mA Power (Pd): 500mW DC current gain (hFE@Ic,Vce): 100@10mA, 10V 100-300 silk screen 2D