Triode/MOS tube/transistor/module

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation (1mm high) with a small footprint and footprint (8x8 mm2). SUPERFET III MOSFETs with Power88 encapsulation provide excellent switching performance with lower parasitic power inductance and separated power and drive sources. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).

This device is intended for use in medium power amplifiers and switches requiring up to 500 mA collector current. From Process 19.

Type PNP IC(A) -0.1 VCBO(V) -50 VCEO(V) -45 VEBO(V) -5 VCE(sat)(V) -0.3

YJQ30N03A-F1-1100HF