Triode/MOS tube/transistor/module

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SUPERFET III MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation with a small height (1mm high) and small footprint (8 * 8 mm2). The SUPERFET III MOSFETs within the Power88 encapsulation provide superior switching performance with lower parasitic power supply inductance and separated power and drive sources. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).

N-channel, 100V, 58A, 11mΩ@10V

Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 0.6A Power (Pd): 0.2W Collector cut-off current (Icbo): 0.1uA Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 500mA@50mA Characteristic frequency (fT): 250MHz

This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

These bipolar power Darlington transistors are used as output devices in complementary general purpose amplifier applications.

Voltage VDSS60V, on-resistance Rds18 milliohms, current ID50A