Triode/MOS tube/transistor/module

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Added G-S Zener to increase ESD voltage level.

N-channel, 200V, 30A, 110mΩ@10V

Drain-source voltage (Vdss): 20V Continuous drain current (Id): 5.5A Power (Pd): 1.25W On-resistance (RDS(on)@Vgs,Id): 25mΩ@10V,5A