Triode/MOS tube/transistor/module

N-channel, 30V, 13A, 11.3mΩ@10V

This NPN bipolar transistor is suitable for general purpose amplifier applications. The device features SC?75/SOT?416 encapsulation and is suitable for low power surface mount applications.

N-channel, 900V, 9A

N-channel, 75V, 75A, 13mΩ@10V

PNP, Vceo=-60V, Ic=-3A

N-CH

P-channel, -20V, -2.8A, 130mΩ@-4.5V

N-channel 60V 115mA

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.