Triode/MOS tube/transistor/module

Type N+N VDSS(V) 30 ID@TC=60?C(A) 8.5 PD@TC=60?C(W) 1.4 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.40V 23

MOSFET N/P-CH 30V

Type PNP IC(A) -0.5 VCBO(V) -40 VCEO(V) -25 VEBO(V) -5 VCE(sat)(V) -0.6

P-channel, -30V, -1.6A

UItraFET devices combine features to deliver benchmark energy efficiency in power conversion applications. These devices are optimized for Rds(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -60V, current: -35A, 10V internal resistance (Max): 0.033Ω, 4.5V internal resistance (Max): 0.04Ω, power: 90W

P-channel, -30V, -4.8A, 49mΩ@-10V

N-channel, 600V, 10A, 0.75Ω@10V