onsemi (Ansemi)
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FCMT199N60 N-Channel 600V 20.2A Power MOSFET, N-Channel, SUPERFET II, ​​FAST, 600 V, 20.2 A, 199 mΩ

FCMT199N60

N-Channel 600V 20.2A Power MOSFET, N-Channel, SUPERFET II, ​​FAST, 600 V, 20.2 A, 199 mΩ
Číslo dílu
FCMT199N60
Kategorie
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Výrobce/značka
onsemi (Ansemi)
Encapsulation
Power-88
Balení
taping
Počet balíků
3000
Popis
SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation (1mm high) with a small footprint and footprint (8x8 mm2). SUPERFET III MOSFETs with Power88 encapsulation provide excellent switching performance with lower parasitic power inductance and separated power and drive sources. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).
Žádost o nabídku
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Na skladě 78645 PCS
Kontaktní informace
Klíčová slova FCMT199N60
FCMT199N60 Elektronické komponenty
FCMT199N60 Odbyt
FCMT199N60 Dodavatel
FCMT199N60 Distributor
FCMT199N60 Datová tabulka
FCMT199N60 Fotky
FCMT199N60 Cena
FCMT199N60 Nabídka
FCMT199N60 Nejnižší cena
FCMT199N60 Vyhledávání
FCMT199N60 Nákup
FCMT199N60 Chip