onsemi (Ansemi)
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FCMT299N60 N-Channel 600V 12A Power MOSFET, N-Channel, SUPERFET II, ​​FAST, 600 V, 12 A, 299 mΩ

FCMT299N60

N-Channel 600V 12A Power MOSFET, N-Channel, SUPERFET II, ​​FAST, 600 V, 12 A, 299 mΩ
Číslo dílu
FCMT299N60
Kategorie
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Výrobce/značka
onsemi (Ansemi)
Encapsulation
Power-88
Balení
taping
Počet balíků
3000
Popis
SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation (1mm high) with an extremely small footprint and footprint (8x8 mm2). SuperFET II MOSFETs feature Power88 encapsulation with lower parasitic power supply inductance and separated power and drive sources for excellent switching performance. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).
Žádost o nabídku
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Na skladě 55227 PCS
Kontaktní informace
Klíčová slova FCMT299N60
FCMT299N60 Elektronické komponenty
FCMT299N60 Odbyt
FCMT299N60 Dodavatel
FCMT299N60 Distributor
FCMT299N60 Datová tabulka
FCMT299N60 Fotky
FCMT299N60 Cena
FCMT299N60 Nabídka
FCMT299N60 Nejnižší cena
FCMT299N60 Vyhledávání
FCMT299N60 Nákup
FCMT299N60 Chip