onsemi (Ansemi)
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NSS1C200MZ4T1G PNP 100V 2A Low Saturation Transistor, PNP, 100 V, 2.0 A

NSS1C200MZ4T1G

PNP 100V 2A Low Saturation Transistor, PNP, 100 V, 2.0 A
Číslo dílu
NSS1C200MZ4T1G
Kategorie
Triode/MOS Tube/Transistor > Triode(BJT)
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOT-223
Balení
taping
Počet balíků
1000
Popis
Low saturation voltage bipolar junction transistors (BJTs) are tiny surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
Žádost o nabídku
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Na skladě 53608 PCS
Kontaktní informace
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Klíčová slova NSS1C200MZ4T1G
NSS1C200MZ4T1G Elektronické komponenty
NSS1C200MZ4T1G Odbyt
NSS1C200MZ4T1G Dodavatel
NSS1C200MZ4T1G Distributor
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NSS1C200MZ4T1G Cena
NSS1C200MZ4T1G Nabídka
NSS1C200MZ4T1G Nejnižší cena
NSS1C200MZ4T1G Vyhledávání
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NSS1C200MZ4T1G Chip