Triode/MOS tube/transistor/module

Automotive Power MOSFETs for compact and efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.

Type: P-channel Drain-source voltage (Vdss): 40V Continuous Drain current (Id): 4.5A Power (Pd): 1.6W On-resistance (RDS(on)@Vgs,Id: 36mΩ@10V, 6A Threshold voltage (Vgs(th)@Id): 1.6@250uA Gate charge (Qg@Vgs) 16nC@10V Input capacitance (Ciss@Vds): 1.1nF@20V, Vds=40v Id=4.5A Rds=36mΩ, operating temperature: -55℃~+150℃@(Tj)

Type: One N-Channel, One P-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 25A/-25A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id: 11mΩ@4.5V, 4A/18mΩ@10V, 3A Threshold voltage (Vgs(th)@Id): 0.7V@250uA/-0.7V@250uA Gate charge (Qg@Vgs) [email protected] /[email protected] V input capacitance (Ciss@Vds): 0.95nF@10V/0.9nF@10V, Vds=20v Id=25A/-25A Rds=11mΩ/18mΩ, working temperature: -55℃~+150℃@(Tj)

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 140A Power (Pd): 227W On-Resistance (RDS(on)@Vgs,Id): 5.1mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 2.8V@250uA Gate charge (Qg@Vgs): 56nC@10V Input capacitance (Ciss@Vds): 3.6nF@50V, Vds=100V Id=140A Rds=5.1mΩ, working Temperature: -55℃~+150℃@(Tj)

Type: Dual N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 11A Power (Pd): 2.5W On-Resistance (RDS(on)@Vgs,Id: 8.5mΩ@10V, 15A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs) 13nC@10V Input capacitance (Ciss@Vds): 0.87nF@20V, Vds=40v Id=11A Rds=8.5mΩ, working Temperature: -55℃~+150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 30V Continuous Drain current (Id): 230A Power (Pd): 58W On-resistance (RDS(on)@Vgs,Id: 1.5mΩ@10V, 12A Threshold voltage ( Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs) 115nC@10V Input capacitance (Ciss@Vds): 6.536nF@15V, Vds=300v Id=230A Rds=1.5mΩ, operating temperature: -55℃~+150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 20V Continuous Drain current (Id): 90A Power (Pd): 68W On-resistance (RDS(on)@Vgs,Id: 2.8mΩ@4.5V, 30A Threshold voltage (Vgs(th)@Id): 0.7V@250uA Gate charge (Qg@Vgs) [email protected] Input capacitance (Ciss@Vds): 3.2nF@15V, Vds=20v Id=90A Rds=2.8mΩ, working Temperature: -55℃~+150℃@(Tj)

Type: P-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 30A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 52mΩ@10V,10A Threshold Voltage ( Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 73nC@10V Input capacitance (Ciss@Vds): 4.507nF@50V, Vds=100V Id=30A Rds=52mΩ, operating temperature: -55℃~+150℃@(Tj)

Type: Dual N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 50A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,10A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.7nF@30V, Vds=60V Id=50A Rds=11mΩ, operating temperature : -55℃~+150℃@(Tj) DFN5*6;

Type: Dual N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 40A Power (Pd): 20.8W On-Resistance (RDS(on)@Vgs,Id: 13mΩ@10V, 10A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs) 11.7nC@10V Input capacitance (Ciss@Vds): 0.51nF@30V, Vds=60v Id=40A Rds=13mΩ, operating temperature : -55℃~+150℃@(Tj)

Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 33A Power (Pd): 59W On-resistance (RDS(on)@Vgs, Id: 26Ω@10V, 10A Threshold voltage (Vgs (th)@Id): 1.6V@250uA Gate charge (Qg@Vgs) 27nC@10V Input capacitance (Ciss@Vds): 1.31nF@15V, Vds=40v Id=33A Rds=26mΩ, operating temperature: -55 ℃~+150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 650V Continuous drain current (Id): 12A Power (Pd): 65W On-resistance (RDS(on)@Vgs,Id: 0.76Ω@10V, 6A Threshold voltage ( Vgs(th)@Id): 3.5V@250uA Gate charge (Qg@Vgs) 51nC@10V Input capacitance (Ciss@Vds): 1.641nF@25V, Vds=650v Id=12A Rds=0.76Ω, operating temperature: -55℃~+150℃@(Tj)

Type: N-Channel Drain-Source Voltage (Vdss): 150V Continuous Drain Current (Id): 140A Power (Pd): 260W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 2.8V@250uA Gate charge (Qg@Vgs): 19nC@10V Input capacitance (Ciss@Vds): 5.025nF@75V Operating temperature: -55℃~+150℃@(Tj )

Type: N-Channel Drain-Source Voltage (Vdss): 650V Continuous Drain Current (Id): 7A Power (Pd): 97W On-Resistance (RDS(on)@Vgs,Id: 1.37Ω@10V, 3.5A Threshold Voltage (Vgs(th)@Id): 3.5V@250uA Gate charge (Qg@Vgs) 32nC@10V Input capacitance (Ciss@Vds): 0.891nF@25V, Vds=650v Id=7A Rds=1.37Ω, operating temperature : -55℃~+150℃@(Tj)

Type: N-Channel Drain-Source Voltage (Vdss): 70V Continuous Drain Current (Id): 70A On-Resistance (RDS(on)@Vgs,Id): 8.8mΩ@10V,10A Threshold Voltage (Vgs(th)@ Id): 3.0V@250uA Gate charge (Qg@Vgs): 56nC@10V Input capacitance (Ciss@Vds): 3nF@30V, Vds=70V Id=70A Rds=8.8mΩ, operating temperature: -55℃~+ 150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 650V Continuous drain current (Id): 10A Power (Pd): 65W On-resistance (RDS(on)@Vgs,Id: 0.98Ω@10V, 5A Threshold voltage ( Vgs(th)@Id): 3.5V@250uA Gate charge (Qg@Vgs) 48nC@10V Input capacitance (Ciss@Vds): 1.377nF@25V, Vds=650v Id=10A Rds=0.98mΩ, operating temperature: -55℃~+150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 200V Continuous Drain current (Id): 75A Power (Pd): 338W On-resistance (RDS(on)@Vgs, Id: 17mΩ@10V, 40A Threshold voltage (Vgs (th)@Id): 4.3V@250uA Gate charge (Qg@Vgs) 85nC@10V Input capacitance (Ciss@Vds): 7.5nF@25V, Vds=200v Id=75A Rds=17mΩ, operating temperature: -55 ℃~+150℃@(Tj)

N-channel, 200V, 3.8A, 0.7Ω@10V