Triode/MOS tube/transistor/module

This PNP bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -40V Collector current (Ic): -200mA Power (Pd): 200mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@50mA HFE: 100-300

IGBT module

Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 2.3mΩ ID(A) 150A

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 12 ID(A)Max. -5 VGS(th)(v) - RDS(ON)(m?)@4.90V 55 Qg(nC)@ 4.5V 6.2 QgS(nC) 2.2 Qgd(nC) 1.8 Ciss(pF) 580 Coss(pF) 98 Crss(pF) 77