Triode/MOS tube/transistor/module

Type: N-Channel High Turn-On Drain-Source Voltage (Vdss): 68V Continuous Drain Current (Id): 80A Power (Pd): 147W On-Resistance (RDS(on)@Vgs,Id): 6.6mΩ@10V,30A Threshold voltage (Vgs(th)@Id): 3.0V@250uA Gate charge (Qg@Vgs): 35nC@10V Input capacitance (Ciss@Vds): 4nF@25V , Vds=68V Id=80A Rds=6.6mΩ, Working temperature: -55℃~+150℃@(Tj);

P-channel, -12V, -11.5A, 26mΩ@ -1.8V

N-channel, 30V, 60A, 30mΩ@4.5V

N channel