Triode/MOS tube/transistor/module

N-channel 650V 10A

60V,12A

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100A On-Resistance (RDS(on)@Vgs,Id): 4mΩ@10V 6Ω@4.5V, Threshold Voltage (Vgs(th )@Id): 1.0V@250uA

High current MOS tube

P-channel, VDSS withstand voltage 20V, ID current 30A, RDON on-resistance 15mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.4-1.0V,

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -30 VGS(th)(v) -1.9 RDS(ON)(m?)@4.179V 20 Qg(nC) @4.5V 33 QgS(nC) 5.5 Qgd(nC) 8.3 Ciss(pF) 1760 Coss(pF) 228 Crss(pF) 185

P-channel, -30V, -0.02A, 300Ω@0V

N+N channel, VDSS withstand voltage 40V, ID current 12A, RDON on-resistance 16mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.0V,