Triode/MOS tube/transistor/module

This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN 15V 3A

2SC2412-R-F2-0000HF

N-channel, 100V, 1A, 630mΩ@10V

Type N VDSS(V) 500 ID@TC=95?C(A) 18 PD@TC=95?C(W) 60 VGS(V) ±30 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.75V -

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW

VCES(V) 1200 IC(A)@174℃ 15 VCE(sat)(V) 1.7 E(off)(mj) 0.4 Vf(V) 2