Triode/MOS tube/transistor/module

ULN2803A Darlington Transistor Array

Gallium Nitride GaN 650V Power Transistor(FET)

Gallium Nitride GaN 650V Power Transistor(FET)

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 3A Power (Pd): 500mW Collector cut-off current (Icbo): 1μA Collector-emitter saturation voltage (VCE(sat) @Ic,Ib): 500mV@2A HFE: 160-320

MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±12 Vth(V) 0.7-1.5 On-Resistance RDS(ON) (mΩ) 22/28 Continuous Drain Current ID (A) 5.8

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Double NPN, Vces=80V, Ic=1A