Koupit onsemi (Ansemi) NTJD1155LT1G Dual P-Channel, High Side Load Switch with Level Shift, Power MOSFET, -8V, ±1.3A, 175mΩ

onsemi (Ansemi)

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NTJD1155LT1G

Dual P-Channel, High Side Load Switch with Level Shift, Power MOSFET, -8V, ±1.3A, 175mΩ

Číslo dílu

NTJD1155LT1G

Kategorie

Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)

Výrobce/značka

onsemi (Ansemi)

Encapsulation

SC-88-6

Balení

taping

Počet balíků

3000

Popis

NTJD1155L integrates P-channel and N-channel MOSFETs in one encapsulation. The device is especially suitable for portable electronic equipment requiring low control signals, low battery voltage and high load current. This P-channel device is designed for use in load switches using ON Semiconductor's advanced trench technology. This N-channel acts as a level shifter with an external resistor (R1) driving the P-channel. The N-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates from a 1.8 to 8.0 V supply line and can drive loads up to 1.3 A with 8.0 V applied to VIN and VON/OFF.

Žádost o nabídku

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Na skladě 67995 PCS

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