ST (STMicroelectronics)
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L6392D Half-bridge IGBT MOSFET sink current 430mA source current 290mA

L6392D

Half-bridge IGBT MOSFET sink current 430mA source current 290mA
Číslo dílu
L6392D
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
ST (STMicroelectronics)
Encapsulation
SOIC-14
Balení
Tube
Počet balíků
50
Popis
Žádost o nabídku
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Na skladě 57942 PCS
Kontaktní informace
Související produkty
L6390D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6390D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6390DTR Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6391D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6392D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6392DTR Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6393D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6398D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Klíčová slova L6392D
L6392D Elektronické komponenty
L6392D Odbyt
L6392D Dodavatel
L6392D Distributor
L6392D Datová tabulka
L6392D Fotky
L6392D Cena
L6392D Nabídka
L6392D Nejnižší cena
L6392D Vyhledávání
L6392D Nákup
L6392D Chip