ST (STMicroelectronics)
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L6391D Half-bridge IGBT MOSFET sink current 430mA source current 290mA

L6391D

Half-bridge IGBT MOSFET sink current 430mA source current 290mA
Číslo dílu
L6391D
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
ST (STMicroelectronics)
Encapsulation
SOIC-14
Balení
taping
Počet balíků
2500
Popis
Žádost o nabídku
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Na skladě 51008 PCS
Kontaktní informace
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L6390D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6391D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6392D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Klíčová slova L6391D
L6391D Elektronické komponenty
L6391D Odbyt
L6391D Dodavatel
L6391D Distributor
L6391D Datová tabulka
L6391D Fotky
L6391D Cena
L6391D Nabídka
L6391D Nejnižší cena
L6391D Vyhledávání
L6391D Nákup
L6391D Chip