ST (STMicroelectronics)
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L6390D Half-bridge IGBT MOSFET sink current 430mA source current 290mA

L6390D

Half-bridge IGBT MOSFET sink current 430mA source current 290mA
Číslo dílu
L6390D
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
ST (STMicroelectronics)
Encapsulation
SO-16
Balení
Tube
Počet balíků
50
Popis
Žádost o nabídku
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Na skladě 98155 PCS
Kontaktní informace
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L6390D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6390D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6390DTR Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6391D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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L6398D Half-bridge IGBT MOSFET sink current 430mA source current 290mA
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Klíčová slova L6390D
L6390D Elektronické komponenty
L6390D Odbyt
L6390D Dodavatel
L6390D Distributor
L6390D Datová tabulka
L6390D Fotky
L6390D Cena
L6390D Nabídka
L6390D Nejnižší cena
L6390D Vyhledávání
L6390D Nákup
L6390D Chip