Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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YANGJIE (Yang Jie)
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HT (Golden Honor)
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CBI (Creation Foundation)
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Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -2.8 VGS(th)(v) -1.7 RDS(ON)(m?)@4.100V 200 Qg(nC) @4.5V 4.6 QgS(nC) 1.4 Qgd(nC) 1.6 Ciss(pF) 456 Coss(pF) 59 Crss(pF) 38
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Crystal Conductor Microelectronics
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SOT-23 NPN 160V 0.6A 100MHZ
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Infineon (Infineon)
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N-channel, 55V, 17A, 65mΩ@10V
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Infineon (Infineon)
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N-channel, 75V, 82A, 13mΩ@10V
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HUASHUO (Huashuo)
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CJ (Jiangsu Changdian/Changjing)
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Silicon carbide MOS? 1200V90A? Internal resistance 25 milliohms
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ElecSuper (Jingxin Micro)
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DIODES (US and Taiwan)
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Pre-bias 2 NPN, Vceo=50V, Ic=100mA
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N-Channel Switch This device is suitable for low-level analog switches, sample-and-hold circuits, and chopper-stabilized amplifiers. From Process 51.
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N-Channel Switch This device is suitable for low-level analog switches, sample-and-hold circuits, and chopper-stabilized amplifiers. From Process 51.
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