Triode/MOS tube/transistor/module

N channel

Type N+N VDSS(V) 20 ID@TC=40?C(A) 6 PD@TC=40?C(W) 1.25 VGS(V) ±12 RDS(on)(m?)Max.@TC= 25?C VGS=4.20V 14

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

P+P channel, -30V, -7.3A, 29mΩ@-10V

NPN, Vceo=20V, Ic=3A, hfe=180~390, silk screen CFR