Triode/MOS tube/transistor/module

N-channel, 20V, 4.1A, 46mΩ@10V

PNP, Vceo=-30V, Ic=-1A

P-channel, -30V, -2.2A, 130mΩ@-10V

PNP, Vceo=-50V, IC=-100mA, PD=200mW, built-in bias resistor

N-channel 30V 5.8A

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

ON Semiconductor's low saturation voltage transistor family is a miniature surface mount device with ultra-low saturation voltage saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows these bipolar transistor devices to be driven directly from the control output of the PMU, while the linear gain (Beta) makes them ideal components for analog amplifiers.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW

NPN, Vceo=15V, Ic=50mA, Silkscreen J8