Triode/MOS tube/transistor/module

N-channel 30V 5.8A

P-channel, -30V, -4.8A, 38mΩ@10V

UMD2N-F2-0000HF

Type N VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS42°C(A) 6 RDS(Max) 38 PD42°C(W) 1.25

Configuration Single Type N-Ch VDS(V) 25 VGS(V) 20 ID(A)Max. 280 VGS(th)(v) - RDS(ON)(m?)@4.189V 1.4 Qg(nC)@4.5V 72 QgS(nC) 18 Qgd(nC) 24 Ciss(pF) 7752 Coss(pF) 1120 Crss(pF) 650

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 100V, current: 32A, 10V internal resistance (Max): 0.042Ω, power: 100W

N-channel 600V 22A