Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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APM (Jonway Microelectronics)
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YANGJIE (Yang Jie)
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The excellent gain linearity and safe operating area performance of this bipolar power transistor make it suitable for high-fidelity audio amplifier output stages and other linear applications.
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.5-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 4.1
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HXY MOSFET (Huaxuanyang Electronics)
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DIODES (US and Taiwan)
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China Resources Huajing
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NPN,Vceo=450V,Ic=2A
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HUASHUO (Huashuo)
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DIODES (US and Taiwan)
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Drain-source voltage (Vdss): 300V Continuous drain current (Id): 140A MOS tube
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CBI (Creation Foundation)
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Current 50MA Voltage 30V
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N-channel, 100V, 15.6A
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