Triode/MOS tube/transistor/module

This P-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -18 VGS(th)(v) -1.5 RDS(ON)(m?)@4.138V 31 Qg(nC) @4.5V 27 QgS(nC) 2.5 Qgd(nC) 6.7 Ciss(pF) 1560 Coss(pF) 116 Crss(pF) 97

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 1.8 RDS(ON)(m?)@4.375V 23 Qg(nC)@4.5V 28 QgS(nC) 3.5 Qgd(nC) 6.5 Ciss(pF) 1680 Coss(pF) 115 Crss(pF) 85

The FNB41060 is a newly developed Motion SPM 45 series from ON Semiconductor to provide very compact and high-performance inverters for AC motor drives in low-power applications such as washing machines and industrial fans. It combines low-loss short-circuit rated IGBTs and optimized gate drivers in a fully isolated encapsulation to provide a simple and robust design. System reliability is further enhanced by a built-in NTC for temperature monitoring, integrated undervoltage lockout for high and low side, and overcurrent protection input. Three separate open-emitter pins for the low-side IGBT enable three-leg current sensing. A built-in bootstrap diode and a dedicated VS pin make PCB layout easy.

NPN, Vceo=50V, Ic=100mA

transistors,PNP 25V 1500mA 300mW,SOT-23