Triode/MOS tube/transistor/module

N-channel, 150V, 50A, 20mΩ@10V

Semiconductor Transistor Field Effect Transistor MOS tube, TO-247, N channel, withstand voltage: 650V, current: 18A, 10V internal resistance (Max): 0.55Ω, power: 230W

Two N-channel, 20V, 880mA

NPN

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.