Triode/MOS tube/transistor/module

Automotive power MOSFETs capable of withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

Configuration Dual Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 14 VGS(th)(v) 1.5 RDS(ON)(m?)@4.169V 17 Qg(nC)@4.5V 7.5 QgS(nC) 3.24 Qgd(nC) 2.75 Ciss(pF) 815 Coss(pF) 95 Crss(pF) 60

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

PNP, Vceo=-50V, Ic=150mA

Small signal triode, used in switching, amplification, pre-driver and other circuits

NPN, Vceo=30V, Ic=500mA, hfe=200~600