Triode/MOS tube/transistor/module
PANJIT (Qiangmao)
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LONTEN (Longteng Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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P-channel, -30V, -4.2A, 60mΩ@-10V
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APM (Jonway Microelectronics)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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P-channel, -30V, -9.8A, 11mΩ@-20V
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Hottech (Heketai)
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Infineon (Infineon)
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P-channel, -150V, -13A, 0.295Ω@-10V
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YANGJIE (Yang Jie)
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Infineon (Infineon)
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Wuxi Unisplendour
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JSMSEMI (Jiesheng Micro)
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PANJIT (Qiangmao)
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NCE (Wuxi New Clean Energy)
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This device is specifically designed as a single encapsulation solution for battery charging switches in cell phones and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-resistance for lowest conduction losses. When connected in a typical common source configuration, bidirectional current flow is possible. MicroFET 2x2 encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.
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ISC (Wuxi Solid Electric)
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