Triode/MOS tube/transistor/module

The device is suitable for general-purpose amplifier applications with collector currents up to 300 mA. From Process 10.

This N-channel MV MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistors and base-emitter resistors. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.

Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 3A Power (Pd): 1.25W On-Resistance (RDS(on)@Vgs,Id): 98Ω@10V,3A Threshold Voltage (Vgs(th)@Id): 2.5V@250μA

High Voltage, High Current Darlington Transistor Array

Ceramic 883 Class 50V Darlington Transistor

NPN

N-channel, 600V, 10A, 0.75Ω@10V