Triode/MOS tube/transistor/module

The original factory changed the model, and the performance is exactly the same. The corresponding old model is: FDN304P

N-channel, 100V, 24A, 36mΩ@10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 110@2mA,5V

PNP, Vceo=-50V, Ic=-150mA, hfe=120~240

Type: N-Channel Drain-Source Voltage (Vdss): 55V Continuous Drain Current (Id): 110A Power (Pd): 200W

These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest on-state resistance per silicon area, resulting in outstanding performance. The device is capable of withstanding high energy in avalanche mode and the diode has extremely low reverse recovery time and stored charge. The device is designed for applications where energy efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. The previous development type was TA75344.

This RF transistor is suitable for low noise amplifier applications. MCPH encapsulation has excellent heat dissipation characteristics and is suitable for high temperature environments. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.