Triode/MOS tube/transistor/module

N-channel, 20V, 5.47A, 29mΩ@4.5V

NPN

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 150mW DC current gain (hFE@Ic,Vce): 100@10mA,1V 100~300 PNP 40V 0.2A

N+N channel, 30V, 6.8A, 22mΩ@10V

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology achieves the lowest on-resistance per unit of silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

N-channel, 650V, 0.85?@10V, 8.0A