Triode/MOS tube/transistor/module

Low VCE(sat) bipolar transistors are miniature surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control.

PNP, -30V, -500mA

Drain-source voltage (Vdss): 150V Continuous drain current (Id): 120A MOS tube

N-channel, 30V, 100A

N-channel, 60V, 11A

N-channel, 60V, 230mA, 3.5Ω@10V