Triode/MOS tube/transistor/module

Voltage VDSS600V, conduction resistance Rds2.2 ohms, charge Qg25nC, current ID5A

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

MOS, DFN-8 5*6, N-channel, 60V, 15A, 36mΩ (Max), 40W

MOSFET Type N Drain-Source Voltage (Vdss) (V) 85 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 5.5/6 Continuous Drain Current ID (A) 120

N-channel, 30V, 5A, 28mΩ@10V