Triode/MOS tube/transistor/module

PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

N channel

N-CH 60V 115mA

CSD17570Q5B 30V, N-Channel NexFET Power MOSFET, CSD17570Q5B

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 38A Power (Pd): 59W On-Resistance (RDS(on)@Vgs,Id): 23mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 27nC@10V Input capacitance (Ciss@Vds): 1.12nF@15V Operating temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

Type N VDSS(V) 60 ID@TC=74?C(A) 0.3 PD@TC=74?C(W) 0.225 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.54V 4000

N-channel, 100V, 6A, less than 140 milliohms,