Triode/MOS tube/transistor/module

600V, 16A

N+P dual channel, 25V/3.5A(-25V/-2.3A)

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 3A Power (Pd): 1.5W On-resistance (RDS(on)@Vgs,Id: 60mΩ@10V, 3A Threshold voltage ( Vgs(th)@Id): 1.3V@250uA Gate charge (Qg@Vgs): 8.8nC@10V Input capacitance (Ciss@Vds): 0.4nF@30V, Vds=60v Id=3A Rds=60mΩ, operating temperature : -55℃~+150℃@(Tj)

N-channel, 75V, 350A, 1.85mΩ@10V

N-channel, 20V