Triode/MOS tube/transistor/module

N+N channel, 30V, 6A, 26mΩ@10V

Type(N)/ESD(Y)/VDS20(V)/VGS10(±V)/VGS(th)0.45-1.1(V)/ID0.75(A)

MOS, N-channel, 82N25, 250V, 82A, 0.035Ω(Max)

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD41C (NPN) and MJD42C (PNP) are complementary devices.

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 20 VGS(th)(v) 1.8 RDS(ON)(m?)@4.269V 6 Qg(nC)@4.5V 12.9 QgS(nC) 4.22 Qgd(nC) 7.3 Ciss(pF) 1700 Coss(pF) 265 Crss(pF) 165

This is an N-channel enhancement mode MOSFET. This product minimizes on-resistance while providing robust, reliable and fast switching performance. The BSS138W is especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

NPN, Vo=50V, Io=100mA

NPN,Vceo=40V,Ic=600mA

Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 9 On-Resistance (mΩ) 13.5 Input Capacitance (Ciss) 1440 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 28