Triode/MOS tube/transistor/module

transistors,PNP 60V 600mA 250mW,SOT-23

Drain-source voltage (V) 20 Continuous drain current (Id) (A) 6.8 Threshold voltage (V) 1.2 Power (W) 1.2 On-resistance 15V (Ω) Input capacitance (pF) 900

P-channel, 30V, 100A, 3mΩ@10V

NPN

N-channel, 25V, 1.3A

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 200@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

P-channel,-30V,-9.7A, 0.0105Ω@-10V