Triode/MOS tube/transistor/module

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

These dual N-channel logic level enhancement mode field effect transistors are produced using a proprietary high cell density DMOS technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace bipolar digital transistors and small signal MOSFETs in low voltage applications.