Triode/MOS tube/transistor/module

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.

Type P VDSS(V) 40 VGS(V) 20 VTH(V) 1 IDS56°C(A) 10 RDS(Max) 50 PD56°C(W) 2.8

This device is specifically designed as a single encapsulation solution for battery charging switches in cell phones and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-resistance for lowest conduction losses. When coupled in a typical common source configuration, bidirectional current flow is possible. MicroFET 2x2 encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.

NPN+PNP array

These N-channel 2.5V specified MOSFETs use the advanced PowerTrench process. It is optimized for power management applications with wide gate drive voltage ratings (2.5V – 10V).

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