Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, TO-251A, P channel, withstand voltage: -30V, current: -90A, 10V internal resistance (Max): 0.0065Ω, 4.5V internal resistance (Max): .009Ω, power: 130W

CSD83325L, Dual N-Channel NexFET™ Power MOSFET 6-PICOSTAR

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 400V Collector Current (Ic): 200mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 750mV@50mA, 5mA DC current gain (hFE@Ic,Vce): 50@10mA, 10V Operating temperature: +150℃@(Tj)