Triode/MOS tube/transistor/module

BC848BW-F2-0000HF

P-channel, -20V, -35A, 0.0087Ω@-10V

30V, N-Channel NexFET MOSFET™, Single SON2x2, 16.9mΩ 6-WSON -55 to 150

N-Channel 350V 0.2A 15Ω

CSD23280F3 -12V, P-Channel NexFET MOSFET?, Single LGA 0.6x0.7, 116mΩ

Type N VDSS(V) 100 ID@TC=92?C(A) 80 PD@TC=92?C(W) 188 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.72V -

Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -4.5A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 40mΩ@4.5V ,4A threshold voltage Vgs(th)@Id): -0.3V to -1.0V@250uA

NPN, Vcc=50V, Io=100mA

N-channel, 700V, 4.4A

PNP, Vceo=-100V, Ic=-3A, hfe=10~50, power transistor