Triode/MOS tube/transistor/module

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Added G-S Zener to increase ESD voltage level.

Automotive Power MOSFETs for compact and efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 140A Power (Pd): 227W On-Resistance (RDS(on)@Vgs,Id): 5.4mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 2.8V@250uA Gate charge (Qg@Vgs): 56nC@10V Input capacitance (Ciss@Vds): 3.65nF@50V, Vds=100V Id=140A Rds=5.4mΩ, working Temperature: -55℃~+150℃@(Tj)

NPN, Vceo=100V, Ic=6A

CSD87351Q5D 30V, N-Channel Synchronous Buck NexFET MOSFET™, SON5x6 Power Block, 32A