Triode/MOS tube/transistor/module

Automotive grade P-type MOS, -60V, -35A

N-channel, 20V, 3A, 43mΩ@4.5V

100V/3.3A N-channel

P-type MOS tube@@VDS-30V,ID-100A,RDS(on),Typ@VGS=10V5mR

Dual PNP, Vceo=-65V, Ic=-100mA

These N and P-channel MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Suitable for applications where more expensive SO-8 and TSSOP-8 encapsulations are not possible, these devices offer superior power dissipation in a very small footprint.