Triode/MOS tube/transistor/module

N-Channel 150V/200A 5.5mΩ@10V TO-247

MOS tube type: N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 3.2A Power (Pd): 105W On-resistance (RDS(on)@Vgs,Id): 35Ω@4.5V, 3A

NPN,60V,3A

This N-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary technologies. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Voltage VDSS650V, conduction resistance Rds1.3 ohms, charge Qg28nC, current ID8A

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -75 VGS(th)(v) -0.6 RDS(ON)(m?)@4.175V 4.8 Qg(nC) @4.5V 55 QgS(nC) 10 Qgd(nC) 15 Ciss(pF) 3500 Coss(pF) 577 Crss(pF) 445